1 results listed
In this work, the temperature dependent mean density of interface states (Nss) and series resistance (Rs) profiles
of Au/PVA (Gr-doped)/n-GaAs structures were determined from the current-voltage-temperature (I-V-T) measurements.
The other main electrical parameters such as zero-bias barrier height (ΦBo), ideality factor (n) and reverse-saturation
current (Io) were also obtained as a function of temperature. Experimental results show that the values of ΦBo, n, Io, Rs
and Nss were strongly voltage and temperature dependent. The experimental data confirmed that the values of Nss, Rs and
interfacial polymer layer are important parameters that influence the main electrical characteristics of these structures [1-
3].
International Symposium on Light Alloys and Composite Materials
UHAKS
Habibe Uslu Tecimer
Serhat Orkun TAN
Hüseyin Tecimer